RN1961(TE85L,F)

Toshiba Semiconductor and Storage

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Número de peza	RN1961(TE85L,F)
Fabricante	Toshiba Semiconductor and Storage
Descrición	TRANS 2NPN PREBIAS 0.2W US6
Estado libre de chumbo / Estado RoHS

~~In Stock~~ 380941 pcs
Prezo de referencia (en dólares estadounidenses)	1 pcs	10 pcs	25 pcs	100 pcs	250 pcs
Prezo de referencia (en dólares estadounidenses)	$0.206	$0.148	$0.115	$0.087	$0.062

Parámetro do produto
Produtos relacionados
Novas relacionadas
Folla de datos

Product parameter

Número de peza	RN1961(TE85L,F)
Fabricante	Toshiba Semiconductor and Storage
Descrición	TRANS 2NPN PREBIAS 0.2W US6
Estado libre de chumbo / Estado RoHS
Cantidade dispoñible	380941 pcs
Folla de datos	RN1961-66
Foto do produto	RN1961(TE85L,F).jpg
Categoría	Produtos semicondutores discretos
Voltaxe - Recollida de emisores de colectores (máx.)	50V
Saturación Vce (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Tipo de transistor	2 NPN - Pre-Biased (Dual)
Paquete de dispositivos de provedor	US6
Serie	-
Resistor - Base de emisión (R2)	4.7 kOhms
Resistor - Base (R1)	4.7 kOhms
Potencia - Máx	200mW
Empaquetado	Cut Tape (CT)
Paquete / caso	6-TSSOP, SC-88, SOT-363
Outros nomes	RN1961(TE85LF)CT
Tipo de montaxe	Surface Mount
Nivel de sensibilidade á humidade (MSL)	1 (Unlimited)
Estado libre de chumbo / estado RoHS	Lead free / RoHS Compliant
Frecuencia - Transición	250MHz
Descrición detallada	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
DC Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Actual: recorte do recolector (máximo)	100nA (ICBO)
Actual - Colector (Ic) (máximo)	100mA

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